<?xml version="1.0" encoding="UTF-8"?>
<article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" article-type="research-article" dtd-version="1.2" xml:lang="en">
  <front>
    <journal-meta>
      <journal-id journal-id-type="issn">1561-5405</journal-id>
	    <journal-id journal-id-type="doi">10.24151/1561-5405</journal-id>	  
      <journal-id journal-id-type="publisher-id">Proceedings of Universities. Electronics</journal-id>
      <journal-title-group>
        <journal-title xml:lang="en">Scientifical and technical journal "Proceedings of Universities. Electronics"</journal-title>
        <trans-title-group xml:lang="ru">
          <trans-title>Научно-технический журнал «Известия высших учебных заведений. Электроника»</trans-title>
        </trans-title-group>        
      </journal-title-group>      
      <issn publication-format="print">1561-5405</issn>
      <issn publication-format="online">2587-9960</issn>
      <publisher>
        <publisher-name xml:lang="en">National Research University of Electronic Technology</publisher-name>
        <publisher-name xml:lang="ru">Национальный исследовательский университет "Московский институт электронной техники"</publisher-name>
      </publisher>
    </journal-meta>
    <article-meta>                                    
      
    <article-id pub-id-type="doi">10.24151/1561-5405-2025-30-3-293-302</article-id><article-id pub-id-type="risc">82507624</article-id><article-id pub-id-type="udk">621.362.1:544.654.076.324</article-id><article-categories><subj-group><subject>Технологические процессы</subject></subj-group></article-categories><title-group><article-title xml:lang="en">Hightemperature WCo/ AgZn contact systems for thermoelements</article-title><trans-title-group xml:lang="ru"><trans-title>Высокотемпературные контактные системы W-Co/Ag-Zn для термоэлементов</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author"><string-name xml:lang="ru">Корчагин Егор Павлович</string-name><name-alternatives><name xml:lang="ru"><surname>Корчагин</surname><given-names>Егор Павлович</given-names></name><name xml:lang="en"><surname>Korchagin</surname><given-names>Egor P.</given-names></name></name-alternatives><string-name xml:lang="en">Egor P. Korchagin</string-name><xref ref-type="aff" rid="AFF-1"/></contrib><contrib contrib-type="author"><string-name xml:lang="ru">Лавренова Алина Михайловна</string-name><name-alternatives><name xml:lang="ru"><surname>Лавренова</surname><given-names>Алина Михайловна</given-names></name><name xml:lang="en"><surname>Lavrenova</surname><given-names>Alina M.</given-names></name></name-alternatives><string-name xml:lang="en">Alina M. Lavrenova</string-name><xref ref-type="aff" rid="AFF-1"/></contrib><contrib contrib-type="author"><string-name xml:lang="ru">Рогачев Максим Сергеевич</string-name><name-alternatives><name xml:lang="ru"><surname>Рогачев</surname><given-names>Максим Сергеевич</given-names></name><name xml:lang="en"><surname>Rogachev</surname><given-names>Maxim S.</given-names></name></name-alternatives><string-name xml:lang="en">Maxim S. Rogachev</string-name><xref ref-type="aff" rid="AFF-1"/></contrib><contrib contrib-type="author"><string-name xml:lang="ru">Бабич Алексей Вальтерович</string-name><name-alternatives><name xml:lang="ru"><surname>Бабич</surname><given-names>Алексей Вальтерович</given-names></name><name xml:lang="en"><surname>Babich</surname><given-names>Alexey V.</given-names></name></name-alternatives><string-name xml:lang="en">Alexey V. Babich</string-name><xref ref-type="aff" rid="AFF-1"/></contrib><aff id="AFF-1" xml:lang="ru">National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)</aff></contrib-group><pub-date iso-8601-date="2025-07-30" date-type="pub" publication-format="electronic"><day>30</day><month>07</month><year>2025</year></pub-date><volume>Том. 30 №3</volume><issue>3</issue><fpage>293</fpage><lpage>302</lpage><self-uri>http://ivuz-e.ru/en/issues/Том 30 №3/vysokotemperaturnye_kontaktnye_sistemy_w_co_ag_zn_dlya_termoelementov/</self-uri><abstract xml:lang="en"><p>Quality of contacts in thermoelements significantly determines their efficiency. In contact systems, the interconnect layers functioning in high-temperature area must be formed at temperatures that exclude thermoelectric generators degradation. In this work, for commutation of thermoelements used in high-temperature thermoelectric generators the procedure of formation of a W-Co/Ag-Zn film contact system consisting of diffusion barrier layer and commutation layer, both formed by electrochemical deposition of metals and their alloys, is proposed. Electrolyte compositions and modes for the formation of contact layers were determined. The barrier layer is implemented based on the W-Co alloy, and the commutation layer, based on the Ag-Zn alloy. The commutation layer is formed by layer-by-layer deposition of films, first Ag, then Zn. The films thickness corresponds to mass ratio required for the formation of the Ag-Zn alloy. The commutation layer provides a permanent connection in the thermoelement up to temperatures of 600 °C, while Ag-Zn alloy is formed in the temperature range that excludes the degradation of thermoelectric materials on the surface of which the contact is formed. It has been established that the W-Co/Ag-Zn contact system is thermostable at temperatures up to 600 °C, has a high adhesion strength of 10.6-11.5 MPa and a low specific contact resistance not exceeding (3.4-3.6)⋅10-9 Ohm·m2.</p></abstract><trans-abstract xml:lang="ru"><p>Качество контактов в термоэлементах существенным образом определяет их эффективность. В контактных системах формирование функционирующих в области вы-соких температур коммутационных слоев должно осуществляться при температурах, ис-ключающих деградацию термоэлектрических генераторов. В работе для коммутации тер-моэлементов, используемых в высокотемпературных термоэлектрических генераторах, предложена методика формирования пленочной контактной системы W-Co/Ag-Zn, состо-ящей из диффузионно-барьерного и коммутационного слоев, сформированных электро-химическим осаждением металлов и их сплавов. Определены составы электролитов и ре-жимы формирования контактных слоев. Барьерный слой реализован на основе сплава W-Co, коммутационный слой – на основе сплава Ag-Zn. Коммутационный слой сформирован послойным осаждением пленок сначала Ag, затем Zn. Толщина пленок соответствует необходимому соотношению масс для образования сплава Ag-Zn. Коммутационный слой обеспечивает неразъемное соединение в термоэлементе до температуры 600 °C, при этом сплав Ag-Zn образуется в области температур, исключающих деградацию термоэлектрических материалов, на поверхности которых формируется контакт. Установлено, что контактная система W-Co/Ag-Zn термостабильна при температуре до 600 °C, обладает высокой адгезионной прочностью 10,6–11,5 МПа и низким удельным контактным сопротивлением, не превышающим &amp;#40;3,4–3,6&amp;#41;⋅10–9 Ом·м2.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>thermoelement</kwd><kwd>contact system</kwd><kwd>interconnect layers</kwd><kwd>electrochemical deposition</kwd></kwd-group><kwd-group xml:lang="en"><kwd>thermoelement</kwd><kwd>contact system</kwd><kwd>interconnect layers</kwd><kwd>electrochemical deposition</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Работа выполнена при финансовой поддержке Россий- ского научного фонда (проект № 20-19-00494).</funding-statement><funding-statement xml:lang="ru">The work has been supported by the Russian Science Foundation (project no. 20-19-00494).</funding-statement></funding-group></article-meta>
  </front>
  <body/>
  <back>
    <ref-list><ref id="B1"><label>1.</label><mixed-citation xml:lang="ru">Zoui M. A., Bentouba S., Stocholm J. G., Bourouis M. A review on thermoelectric generators: Progress and applications. Energies. 2020;13(14):3606. DOI: 10.3390/en13143606 EDN: EHCRUT</mixed-citation></ref><ref id="B2"><label>2.</label><mixed-citation xml:lang="ru">Ding S., Zhou Y. Heat conduction in multilayered thermoelectric materials with multiple cracks. Acta Mech. Solida Sin. 2018;31:512-522. DOI: 10.1007/s10338-018-0037-3</mixed-citation></ref><ref id="B3"><label>3.</label><mixed-citation xml:lang="ru">Zhang Zh., Gurtaran M., Dong H. Low-cost magnesium-based thermoelectric materials: Progress, challenges, and enhancements. ACS Appl. Energy Mater. 2024;7(14):5629-5646. DOI: 10.1021/acsaem.4c00961 EDN: GNMGWD</mixed-citation></ref><ref id="B4"><label>4.</label><mixed-citation xml:lang="ru">Zhang H., Wei P., Zhou Ch., Li L., Nie X., Zhu W., Zhao W. Improved contact performance and thermal stability of Co-Ni alloy barrier layer for bismuth telluride-based thermoelectric devices. J. Mater. Sci.: Mater. Electron. 2024;35:727. DOI: 10.1007/s10854-024-12490-y EDN: PAQSFE</mixed-citation></ref><ref id="B5"><label>5.</label><mixed-citation xml:lang="ru">Shtern M., Rogachev M., Shtern Yu., Gromov D., Kozlov A., Karavaev I. Thin-film contact systems for thermocouples operating in a wide temperature range. J. Alloys Compd. 2021;852:156889. DOI: 10.1016/j.jallcom.2020.156889 EDN: YNBRJD</mixed-citation></ref><ref id="B6"><label>6.</label><mixed-citation xml:lang="ru">Olsen M. L., Warren E. L., Parilla P. A., Toberer E. S., Kennedy C. E., Snyder G. J. et al. A high-temperature, high-efficiency solar thermoelectric generator prototype. Energy Procedia. 2014;49:1460-1469. DOI: 10.1016/j.egypro.2014.03.155</mixed-citation></ref><ref id="B7"><label>7.</label><mixed-citation xml:lang="ru">Shtern M. Yu. Multi-section thermoelements, advantages and problems of their creation. Semiconductors. 2022;55(14):2098-2106. DOI: 10.21883/SC.2022.14.53847.02 EDN: GFLOPO</mixed-citation></ref><ref id="B8"><label>8.</label><mixed-citation xml:lang="ru">Ouyang Z., Li D. Modelling of segmented high-performance thermoelectric generators with effects of thermal radiation, electrical and thermal contact resistances. Sci. Rep. 2016;6:24123. DOI: 10.1038/srep24123 EDN: WQLEXN</mixed-citation></ref><ref id="B9"><label>9.</label><mixed-citation xml:lang="ru">Zhu L., Sun D., Li X., Liu W., Huang J., Liang C., Hu X. Electroless plating of iron-group metals and electrochemical comparison for thermoelectric contacts. Solid State Sci. 2024;154:107613. DOI: 10.1016/j.solidstatesciences.2024.107613 EDN: YYVTAD</mixed-citation></ref><ref id="B10"><label>10.</label><mixed-citation xml:lang="ru">Asgari M., Barati Darband G., Monirvaghefi M. Electroless deposition of Ni-W-Mo-Co-P films as a binder-free, efficient and durable electrode for electrochemical hydrogen evolution. Electrochim. Acta. 2023;446:142001. DOI: 10.1016/j.electacta.2023.142001 EDN: DDQWYR</mixed-citation></ref><ref id="B11"><label>11.</label><mixed-citation xml:lang="ru">Lide D. R. (ed.). CRC Handbook of Chemistry and Physics. 85th ed. Boca Raton, FL: CRC Press; 2004. 2712 p.</mixed-citation></ref><ref id="B12"><label>12.</label><mixed-citation xml:lang="ru">Лякишев М. П. (ред.). Диаграммы состояния двойных металлических систем. Т. 1. М.: Машиностроение; 1996. 498 с.</mixed-citation></ref><ref id="B13"><label>14.</label><mixed-citation xml:lang="ru">Lyakishev M. P. (ed.). Diagrams of the state of double metal systems. Vol. 1. Moscow: Mashinostroeniye Publ.; 1996. 498 p. (In Russ.).</mixed-citation></ref><ref id="B14"><label>13.</label><mixed-citation xml:lang="ru">Zhu X., Cao L., Zhu W., Deng Y. Enhanced interfacial adhesion and thermal stability in bismuth telluride/nickel/copper multilayer films with low electrical contact resistance. Adv. Mater.Interfaces. 2018;5(23):1801279. DOI: 10.1002/admi.201801279 EDN: VOLSDZ</mixed-citation></ref><ref id="B15"><label>14.</label><mixed-citation xml:lang="ru">Rhoderick E. H., Williams R. H. Metal-semiconductor contacts. 2nd ed. Oxford: Clarendon Press; 1988. 252 p.</mixed-citation></ref><ref id="B16"><label>15.</label><mixed-citation xml:lang="ru">Shtern M. Yu., Karavaev I. S., Shtern Yu. I., Kozlov A. O., Rogachev M. S. The surface preparation of thermoelectric materials for deposition of thin-film contact systems. Semiconductors. 2019;53(13):1848-1852. DOI: 10.1134/S1063782619130177 EDN: USXPQH</mixed-citation></ref><ref id="B17"><label>16.</label><mixed-citation xml:lang="ru">Штерн М. Ю., Караваев И. С., Рогачев М. С., Штерн Ю. И., Мустафоев Б. Р., Корчагин Е. П., Козлов А. О. Методики исследования электрического контактного сопротивления в структуре металлическая пленка - полупроводник. ФТП. 2022;56(1):31-37. DOI: 10.21883/FTP.2021.12.51689.01</mixed-citation></ref><ref id="B18"><label>19.</label><mixed-citation xml:lang="ru">Stern M. Yu., Karavaev I. S., Rogachev M. S., Stern Yu. I., Mustafoev B. R., Korchagin E. P., Kozlov A. O. Methods for studying electrical contact resistance in the structure of a metal film-semiconductor. Semiconductors. 2022;56(1):24-30. DOI: 10.21883/SC.2022.01.53115.24</mixed-citation></ref><ref id="B19"><label>17.</label><mixed-citation xml:lang="ru">Song J., Kim Y., Cho B. J., Yoo C.-Y., Yoon H., Park S. H. Thermal diffusion barrier metallization based on Co-Mo powder-mixed composites for n-type skutterudite ((Mm,Sm)yCo4Sb12) thermoelectric devices. J. Alloys Compd. 2020;818:152917. DOI: 10.1016/j.jallcom.2019.152917 EDN: DXURBY</mixed-citation></ref></ref-list>    
  </back>
</article>
